DocumentCode :
524141
Title :
A multi-story power delivery technique for 3D integrated circuits
Author :
Jain, Paril ; Tae-Hyoung Kim ; Keane, John ; Kim, Chul Han
Author_Institution :
Dept of ECE, Univ. of Minnesota, Minneapolis, MN, USA
fYear :
2008
fDate :
11-13 Aug. 2008
Firstpage :
57
Lastpage :
62
Abstract :
Integrating circuits in the vertical direction can alleviate interconnect related problems and enable heterogeneous chips to be stacked in a single package with a small form factor. This paper addresses the power delivery issues in 3D chips revealing some interesting facts and design challenges. A multi-story power delivery technique that can reduce the worst case DC noise by 45% and lower the overhead power consumed in the power supply network by 65% is proposed. A test chip layout in an SOI process, showing a 5.3% area overhead, demonstrates the feasibility of the scheme.
Keywords :
integrated circuit noise; silicon-on-insulator; three-dimensional integrated circuits; 3D chips; 3D integrated circuit; SOI process; multistory power delivery technique; worst case DC noise; Adders; Combinational circuits; Delay; Leakage current; MOS devices; Permission; Recycling; Runtime; Three-dimensional integrated circuits; Very large scale integration; 3D chip; multi-story; power delivery; power supply noise;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Low Power Electronics and Design (ISLPED), 2008 ACM/IEEE International Symposium on
Conference_Location :
Bangalore
Print_ISBN :
978-1-4244-8634-2
Electronic_ISBN :
978-1-60558-109-5
Type :
conf
DOI :
10.1145/1393921.1393940
Filename :
5529084
Link To Document :
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