DocumentCode
524141
Title
A multi-story power delivery technique for 3D integrated circuits
Author
Jain, Paril ; Tae-Hyoung Kim ; Keane, John ; Kim, Chul Han
Author_Institution
Dept of ECE, Univ. of Minnesota, Minneapolis, MN, USA
fYear
2008
fDate
11-13 Aug. 2008
Firstpage
57
Lastpage
62
Abstract
Integrating circuits in the vertical direction can alleviate interconnect related problems and enable heterogeneous chips to be stacked in a single package with a small form factor. This paper addresses the power delivery issues in 3D chips revealing some interesting facts and design challenges. A multi-story power delivery technique that can reduce the worst case DC noise by 45% and lower the overhead power consumed in the power supply network by 65% is proposed. A test chip layout in an SOI process, showing a 5.3% area overhead, demonstrates the feasibility of the scheme.
Keywords
integrated circuit noise; silicon-on-insulator; three-dimensional integrated circuits; 3D chips; 3D integrated circuit; SOI process; multistory power delivery technique; worst case DC noise; Adders; Combinational circuits; Delay; Leakage current; MOS devices; Permission; Recycling; Runtime; Three-dimensional integrated circuits; Very large scale integration; 3D chip; multi-story; power delivery; power supply noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Low Power Electronics and Design (ISLPED), 2008 ACM/IEEE International Symposium on
Conference_Location
Bangalore
Print_ISBN
978-1-4244-8634-2
Electronic_ISBN
978-1-60558-109-5
Type
conf
DOI
10.1145/1393921.1393940
Filename
5529084
Link To Document