• DocumentCode
    524141
  • Title

    A multi-story power delivery technique for 3D integrated circuits

  • Author

    Jain, Paril ; Tae-Hyoung Kim ; Keane, John ; Kim, Chul Han

  • Author_Institution
    Dept of ECE, Univ. of Minnesota, Minneapolis, MN, USA
  • fYear
    2008
  • fDate
    11-13 Aug. 2008
  • Firstpage
    57
  • Lastpage
    62
  • Abstract
    Integrating circuits in the vertical direction can alleviate interconnect related problems and enable heterogeneous chips to be stacked in a single package with a small form factor. This paper addresses the power delivery issues in 3D chips revealing some interesting facts and design challenges. A multi-story power delivery technique that can reduce the worst case DC noise by 45% and lower the overhead power consumed in the power supply network by 65% is proposed. A test chip layout in an SOI process, showing a 5.3% area overhead, demonstrates the feasibility of the scheme.
  • Keywords
    integrated circuit noise; silicon-on-insulator; three-dimensional integrated circuits; 3D chips; 3D integrated circuit; SOI process; multistory power delivery technique; worst case DC noise; Adders; Combinational circuits; Delay; Leakage current; MOS devices; Permission; Recycling; Runtime; Three-dimensional integrated circuits; Very large scale integration; 3D chip; multi-story; power delivery; power supply noise;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Low Power Electronics and Design (ISLPED), 2008 ACM/IEEE International Symposium on
  • Conference_Location
    Bangalore
  • Print_ISBN
    978-1-4244-8634-2
  • Electronic_ISBN
    978-1-60558-109-5
  • Type

    conf

  • DOI
    10.1145/1393921.1393940
  • Filename
    5529084