DocumentCode :
52420
Title :
High-Power and High-Efficiency 1.3- 
Superluminescent Diode With Flat-Top and Ultrawide Emiss
Author :
Khan, M.Z.M. ; Alhashim, H.H. ; Ng, T.K. ; Ooi, B.S.
Author_Institution :
Comput., Electr. & Math. Sci. & Eng. (CEMSE) Div., King Abdullah Univ. of Sci. & Technol. (KAUST), Thuwal, Saudi Arabia
Volume :
7
Issue :
1
fYear :
2015
fDate :
Feb. 2015
Firstpage :
1
Lastpage :
8
Abstract :
We report on a flat-top and ultrawide emission bandwidth of 125 nm from InGaAsP/InP multiple quantum-well (MQW) superluminescent diode with antireflection coated and tilted ridge-waveguide device configuration. A total output power in excess of 70 mW with an average power spectral density of 0.56 mW/nm and spectral ripple ≤ 1.2 ± 0.5 dB is measured from the device. Wall-plug efficiency and output power as high as 14% and 80 mW, respectively, is demonstrated from this batch of devices. We attribute the broad emission to the inherent inhomogeneity of the electron-heavy-hole (e-hh) and electron-light-hole (e-lh) recombination of the ground state and the first excited state of the MQWs and their simultaneous emission.
Keywords :
III-V semiconductors; antireflection coatings; electron-hole recombination; gallium arsenide; indium compounds; quantum well devices; ridge waveguides; superluminescent diodes; InGaAsP-InP; antireflection coated device configuration; average power spectral density; electron-heavy-hole recombination; electron-light-hole recombination; excited state; flat-top emission bandwidth; ground state; high-efficiency superluminescent diode; high-power superluminescent diode; inherent inhomogeneity; multiple quantum-well superluminescent diode; simultaneous emission; tilted ridge-waveguide device configuration; total output power; ultrawide emission bandwidth; wall-plug efficiency; wavelength 1.3 mum; Bandwidth; Biomedical optical imaging; Current measurement; Quantum well devices; Stimulated emission; Superluminescent diodes; Temperature measurement; Multiple Quantum-wells; Multiple quantum-wells; broadband emission; high-power; inhomogeneous broadening; superluminescent diode;
fLanguage :
English
Journal_Title :
Photonics Journal, IEEE
Publisher :
ieee
ISSN :
1943-0655
Type :
jour
DOI :
10.1109/JPHOT.2015.2399442
Filename :
7031427
Link To Document :
