Efficient calibration of surface scattering models in Monte Carlo device simulators to measurements

Monte Carlo (MC) device simulators offer an accurate and proven enhancement to device simulators based on balance equations (drift-diffusion and hydrodynamic). In order to keep in touch with the latest advances in gate insulator and channel doping MOS technology, new models for surface scattering processes have to be implemented in these simulators. Calibration of the new models is performed with measured low-field effective mobility in the channel. A method for simulation and extraction of low-field effective mobility for MC device simulators is presented. The method uses the microscopic relaxation time to evaluate the carrier mobility and can be used with unhomogeneus 1D channel doping profiles and quantum-mechanical carrier density. Using this method, efficient evaluation and calibration of new scattering models in MC device simulator is possible. Successful calibration of physically-based surface scattering model in the MC simulator is presented.