• DocumentCode
    524781
  • Title

    Influence of oxidation rate and post-metallization annealing on distributions of deep interface traps in 4H-n-SiC∶SiO2

  • Author

    Gutt, T.

  • Author_Institution
    Inst. of Electron Technol., Warsaw, Poland
  • fYear
    2010
  • fDate
    24-28 May 2010
  • Firstpage
    22
  • Lastpage
    25
  • Abstract
    The dependence of mid-gap and border trap content in SiO2:Si interfaces on oxidation rate in thermally oxidized n-type 4H-SiC was studied using a modified C-V hysteresis method. The minimum deep trap content oxidation conditions where found. It was also shown that the process of post metallization annealing further decreased the density of slow-switching traps in all cases.
  • Keywords
    annealing; hysteresis; metallisation; oxidation; silicon compounds; wide band gap semiconductors; C-V hysteresis method; SiC:SiO2; border trap content; deep interface traps; mid-gap content; n-type 4H-SiC; oxidation rate; post-metallization annealing; thermal oxidation; Admittance; Annealing; Capacitance-voltage characteristics; Electron traps; Hysteresis; Metallization; Oxidation; Silicon carbide; Spectroscopy; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    MIPRO, 2010 Proceedings of the 33rd International Convention
  • Conference_Location
    Opatija
  • Print_ISBN
    978-1-4244-7763-0
  • Type

    conf

  • Filename
    5533698
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=524781