DocumentCode :
524792
Title :
Fabrication of PLZT and the measurement of birefringence
Author :
Lin, Jing-Fung ; Jyh-Shyang Wu ; Jeng, Jiann-Shing ; Wu, Bing-Hsun
Author_Institution :
Dept. of Comput. Applic. Eng., Far East Univ., Tainan, Taiwan
Volume :
1
fYear :
2010
fDate :
5-7 May 2010
Firstpage :
73
Lastpage :
76
Abstract :
In the present work we studied the fabrication of ferroelectric film as PLZT by the sol-gel technique, and the birefringence optical property induced by the external voltage is measured by the electro-optic modulated heterodyne interferometer. The seeding layer as PT is deposited on the ITO glass substrate before the deposition of PLZT film. After the deposition of PLZT film, a conducting layer as SnO2 is then coated on the top of PLZT. Experimental results show that there exists birefringence on this ferroelectric film we made by sol-gel method.
Keywords :
birefringence; ferroelectric thin films; interferometry; lanthanum compounds; lead compounds; sol-gel processing; ITO-SiO2; Pb0.93La0.07(ZrxTi1-x)0.93O3; birefringence; conducting layer; electro-optic modulated heterodyne interferometry; ferroelectric film; glass substrate; optical property; sol-gel method; Birefringence; Electrooptic modulators; Ferroelectric films; Indium tin oxide; Optical device fabrication; Optical films; Optical interferometry; Optical mixing; Optical modulation; Voltage measurement; PLZT; birefringence; sol-gel;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer Communication Control and Automation (3CA), 2010 International Symposium on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-5565-2
Type :
conf
DOI :
10.1109/3CA.2010.5533728
Filename :
5533728
Link To Document :
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