Title :
GaAs MMIC Doherty Power Amplifier with asymmetrical drain bias voltage
Author :
Colantonio, Paolo ; Giannini, Franco ; Giofré, Rocco ; Piacentini, Marco ; Piazzon, Luca
Author_Institution :
Electron. Eng. Dept., Univ. of Roma Tor Vergata, Rome, Italy
Abstract :
This paper presents a 3.4×2.3mm2 MMIC Doherty Power Amplifier in pHEMT GaAs technology, designed for X-Band applications (9.6 GHz). The obtained results shown 31dBm maximum output power with a 47.6% associated drain efficiency. Moreover, in the designed 6dB of output power back-off, from 25dBm to 31dBm output power, the efficiency is higher than 30% with a related gain compression lower than 1.5dB. As will be detailed, such a performance are maintained almost constant in a frequency bandwidth greater than 10% (9.1–10.1 GHz).
Keywords :
Design engineering; Frequency; Gallium arsenide; Impedance; MMICs; PHEMTs; Personal communication networks; Power amplifiers; Power generation; Voltage; MMIC design; doherty power amplifier; high efficiency;
Conference_Titel :
Microwave Radar and Wireless Communications (MIKON), 2010 18th International Conference on
Conference_Location :
Vilnius, Lithuania
Print_ISBN :
978-1-4244-5288-0
