Doherty power amplifier and GaN technology

In this paper, the features of GaN HEMT technology and Doherty Power Amplifier architecture will be investigated, as a possible answer for the stringent requirements of the next generation of wireless systems. In particular, the attention will be focused on the capabilities and the relevant drawbacks of a GaN HEMT technology when designing DPAs. The discussion of the most important DPA´s design aspects will be done through the presentation of several hybrid prototypes. Experimental results will be also given to support the theoretical aspects.