A 100W SiC MESFET amplifier for L-band T/R module of APAR

In the paper, a 100 W SiC MESFET amplifier design for especially L-band T/R module of APAR is presented. The output power higher than 100 W has been achieved by combining in a balanced configuration two single stages with Cree´s 60 W CRF24060 SiC MESFETs. The amplifier design methodology is based on the small-signal model and DC characteristics of SiC MESFET. The model is extracted using the transistor S-parameters at three operating points for On-state, Off-state and normally bias. The measurements and simulations prove usefulness of the proposed method. The amplifier were excited both pulsed and cw signals for the case temperature from 60°C to 140°C. The As result of the case temperature changes the output power drop was lower than 0.5 dB on the level of 150 W.