Title :
Microwave power capabilities of InAlN/GaN HEMTs
Author :
De Jaeger, J. C. ; Gaquiere, Christopher ; Douvry, Y. ; Defrance, Nicolas ; Hoel, Virginie ; Delage, S. ; Sarazin, N. ; Morvan, E. ; Alomari, Mohammad ; Kohn, Erhard ; Dussaigne, A. ; Carlin, J. F. ; Kusmik, J. ; Ostermaier, C. ; Pogany, Dionyz
Author_Institution :
Institut d´Electronique, de Microelectronique et de, Nanotechnologie (UMR 8520)-IEMN, University of Lille, Villeneuve d´Ascq, France
Abstract :
This paper reports on microwave power results of InAlN/GaN HEMTs on silicon carbide substrate. It is shown a power density higher than 10W/mm up to 10GHz. Investigations based on diamond substrate or heat spreaders on top of the device to improve the thermal dissipation are also described.
Keywords :
Electromagnetic heating; Gallium nitride; Gold; HEMTs; III-V semiconductor materials; MODFETs; Microwave devices; Microwave transistors; Silicon carbide; Substrates; GaN; HEMTs; InAlN; microwave power;
Conference_Titel :
Microwave Radar and Wireless Communications (MIKON), 2010 18th International Conference on
Conference_Location :
Vilnius, Lithuania
Print_ISBN :
978-1-4244-5288-0
