DocumentCode :
525101
Title :
Design of a 54 to 63 GHz differential common collector SiGe Colpitts VCO
Author :
Barghouthi, Atheer ; Ellinger, Frank
Author_Institution :
Dept. of Circuit Design & Network Theor., Dresden Univ. of Technol., Dresden, Germany
fYear :
2010
fDate :
14-16 June 2010
Firstpage :
1
Lastpage :
4
Abstract :
The design of a 60 GHz differential common collector Colpitts VCO in SiGe HBT technology with 180 GHz ft is presented. The impact of parasitics on the negative resistance is evaluated and an extension regarding existing design equations is derived. Within a wide tuning range from 54.1 to 62.7 GHz, a phase noise performance between -98 and -90 dBc/Hz is measured at 1 MHz offset. To the knowledge of the authors this is the best phase noise performance of a 60 GHz VCO in silicon yielding such a high tuning bandwidth. At a dc voltage of 2 V and a dc current of 14 mA, the output power amounts to -5 ± 1 dBm.
Keywords :
Bandwidth; Electrical resistance measurement; Equations; Germanium silicon alloys; Heterojunction bipolar transistors; Noise measurement; Phase measurement; Phase noise; Silicon germanium; Voltage-controlled oscillators; Colpitts; HBT; VCO; frequency synthesizer; negative resistance; phase noise;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Radar and Wireless Communications (MIKON), 2010 18th International Conference on
Conference_Location :
Vilnius, Lithuania
Print_ISBN :
978-1-4244-5288-0
Type :
conf
Filename :
5540510
Link To Document :
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