• DocumentCode
    52543
  • Title

    Spatial Resolution Evaluation of ZnO Scintillator as an In-situ Imaging Device in EUV Region

  • Author

    Nakazato, Tomoharu ; Hori, Toshikazu ; Shimizu, Tsuyoshi ; Yamanoi, K. ; Sakai, Kenji ; Takeda, Kenji ; Nishi, R. ; Minami, Yasuo ; Cadatal-Raduban, Marilou ; Sarukura, N. ; Nishimura, Hideki ; Azechi, Hiroshi ; Fukuda, Toshio ; Tanaka, Mitsuru ; Nishikin

  • Author_Institution
    Res. Inst. for Sci. & Technol., Tokyo Univ. of Sci., Noda, Japan
  • Volume
    61
  • Issue
    1
  • fYear
    2014
  • fDate
    Feb. 2014
  • Firstpage
    462
  • Lastpage
    466
  • Abstract
    We captured single shot images of ZnO emission patterns originating from excitation with the EUV laser at Japan Atomic Energy Agency (JAEA). The EUV laser was focused to a spot size of 1 μm on the ZnO crystal by a Fresnel Zone Plate (FZP). The FZP was shifted along the propagation direction of the EUV beam, essentially changing the spot size at the ZnO surface. The emission pattern was detected by a magnifier. The waist radii were determined from the fitting curve as 5.0 μm along the horizontal axis and 4.7 μm along the vertical axis. We also evaluated the spatial resolution of the magnifier, which consists of a Schwarzschild mirror, two lenses and a camera lens to be about 4 μm. These results suggest that the ZnO crystal has sub-micron spatial resolution when used as an in-situ imaging device for the diagnostics of EUV/X-ray sources.
  • Keywords
    II-VI semiconductors; X-ray imaging; scintillation; wide band gap semiconductors; zinc compounds; EUV beam; EUV laser; EUV region; EUV source diagnostics; Fresnel zone plate; Schwarzschild mirror; X-ray source diagnostics; ZnO; camera lens; emission pattern; fitting curve; horizontal axis; in-situ imaging device; propagation direction; scintillator; single shot images; spot size; submicron spatial resolution; vertical axis; waist radii; Crystals; Excitons; Laser beams; Spatial resolution; Ultraviolet sources; X-ray lasers; Zinc oxide; Scintillators; X-ray imaging; wide-band-gap semiconductors;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2013.2286831
  • Filename
    6704861