Title :
Improving surface bipolar activity in thin gate oxide DE-NMOS — A critical HV I/O protection element for nano-meter scale technologies
Author :
Chatterjee, Amitabh ; Pendharkar, Sameer ; Gossner, Harald ; Duvvury, Charvaka ; Brewer, Forrest
Author_Institution :
Dept. of Electr. Eng. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA
Abstract :
Drain Extended (DE-NMOS) ESD protection devices exhibit low ESD performance due to poor bipolar action. The purpose of this work is to investigate the role of surface bipolar phenomenon in 90nm DE-NMOS, which triggers failure due to bipolar turn-on, and next study the impact of adding source/drain resistors on their ESD robustness.
Keywords :
MOS integrated circuits; bipolar integrated circuits; electrostatic discharge; nanoelectronics; DE-NMOS ESD protection devices; ESD robustness; HV I/O protection element; drain extended ESD protection devices; nanometer scale technology; source/drain resistors; surface bipolar activity; surface bipolar phenomenon; thin gate oxide; Protection;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
Conference_Location :
Hiroshima
Print_ISBN :
978-1-4244-7718-0
Electronic_ISBN :
1943-653X
