Challenge to the barrier of conduction loss in PiN diode toward VF<300 mV with pulsed carrier injection concept

Threshold voltage of 0.8 V in forward current conduction in PiN diodes has become a major problem in the efficiency improvement in power electronics systems. This paper challenges to minimize the conduction loss in PiN diode by employing newly proposed pulsed carrier injection mechanism, targeting effective forward voltage drop about a half of the PiN diode threshold voltage of 0.8 V. Under TCAD basis simulation, the authors successfully demonstrated the concept obtaining conduction voltage drop as low as 270 mV at 50 A/cm for 930 V blocking voltage devices.