Title :
Cosmic ray ruggedness of IGBTs for hybrid vehicles
Author :
Nishida, Shuichi ; Shoji, Tomoyuki ; Ohnishi, Toyokazu ; Fujikawa, Touma ; Nose, Noboru ; Ishiko, Masayasu ; Hamada, Kimimori
Author_Institution :
Toyota Motor Corp., Toyota, Japan
Abstract :
Power semiconductors that are used under high voltage conditions in hybrid vehicles (HVs) are required to have a high destruction tolerance against cosmic rays as well as to meet conventional quality standards. This paper describes an investigation into the failure mechanism for single event burnouts (SEB) induced by cosmic rays in insulated gate bipolar transistors (IGBTs). Device destruction tolerance can be greatly improved by adopting an optimized device design that greatly suppresses parasitic thyristor action.
Keywords :
automotive electronics; cosmic ray interactions; failure analysis; hybrid electric vehicles; insulated gate bipolar transistors; power semiconductor devices; radiation hardening (electronics); semiconductor device reliability; IGBT; cosmic ray ruggedness; failure mechanism; high voltage condition; hybrid vehicles; parasitic thyristor action; power semiconductor; single event burnout; Buffer layers; Circuits; Cosmic rays; Electrodes; Failure analysis; Insulated gate bipolar transistors; Neutrons; Substrates; Vehicles; Voltage;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
Conference_Location :
Hiroshima
Print_ISBN :
978-1-4244-7718-0
Electronic_ISBN :
1943-653X
