Cosmic ray ruggedness of IGBTs for hybrid vehicles

Author

Nishida, Shuichi ; Shoji, Tomoyuki ; Ohnishi, Toyokazu ; Fujikawa, Touma ; Nose, Noboru ; Ishiko, Masayasu ; Hamada, Kimimori

Author_Institution

Toyota Motor Corp., Toyota, Japan

fYear

2010

fDate

6-10 June 2010

Firstpage

129

Lastpage

132

Abstract

Power semiconductors that are used under high voltage conditions in hybrid vehicles (HVs) are required to have a high destruction tolerance against cosmic rays as well as to meet conventional quality standards. This paper describes an investigation into the failure mechanism for single event burnouts (SEB) induced by cosmic rays in insulated gate bipolar transistors (IGBTs). Device destruction tolerance can be greatly improved by adopting an optimized device design that greatly suppresses parasitic thyristor action.

Keywords

automotive electronics; cosmic ray interactions; failure analysis; hybrid electric vehicles; insulated gate bipolar transistors; power semiconductor devices; radiation hardening (electronics); semiconductor device reliability; IGBT; cosmic ray ruggedness; failure mechanism; high voltage condition; hybrid vehicles; parasitic thyristor action; power semiconductor; single event burnout; Buffer layers; Circuits; Cosmic rays; Electrodes; Failure analysis; Insulated gate bipolar transistors; Neutrons; Substrates; Vehicles; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on

Conference_Location

Hiroshima

ISSN

1943-653X

Print_ISBN

978-1-4244-7718-0

Electronic_ISBN

1943-653X

Type

conf

Filename

5543963