• DocumentCode
    525882
  • Title

    BD180LV - 0.18 μm BCD technology with best-in-class LDMOS from 7V to 30V

  • Author

    Ko, Kwang-Young ; Park, Il-Yong ; Choi, Yong-Keon ; Yoon, Chul-Jin ; Moon, Ju-Hyoung ; Park, Kyung-Min ; Lim, Hyon-Chol ; Park, Soon-Yeol ; Kim, Nam-Joo ; Yoo, Kwang-Dong ; Hutter, Lou N.

  • Author_Institution
    Analog Foundry Bus. Unit, Dongbu HiTek, Bucheon, South Korea
  • fYear
    2010
  • fDate
    6-10 June 2010
  • Firstpage
    71
  • Lastpage
    74
  • Abstract
    0.18μm BCD technology with the best-in-class nLDMOS is presented. The drift of nLDMOS is optimized to ensure lowest Rsp by using multi-implants and appropriate thermal recipe. The optimized 24V nLDMOS has BVDSS=36V and Rsp=14.5 mΩ-mm2. Electrical SOA and long-term hot electron (HE) SOA are also evaluated. The maximum operating voltage less than 10% degradation of on-resistance is 24.4V.
  • Keywords
    MOSFET; hot electron transistors; BCD technology; best-in-class nLDMOS; long-term hot electron SOA; size 0.18 mum; voltage 7 V to 30 V; Breakdown voltage; Doping; Electric breakdown; Energy management; Foundries; Logic design; Logic devices; Moon; Power semiconductor devices; Semiconductor optical amplifiers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
  • Conference_Location
    Hiroshima
  • ISSN
    1943-653X
  • Print_ISBN
    978-1-4244-7718-0
  • Electronic_ISBN
    1943-653X
  • Type

    conf

  • Filename
    5543968
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=525882