Title :
BD180LV - 0.18 μm BCD technology with best-in-class LDMOS from 7V to 30V
Author :
Ko, Kwang-Young ; Park, Il-Yong ; Choi, Yong-Keon ; Yoon, Chul-Jin ; Moon, Ju-Hyoung ; Park, Kyung-Min ; Lim, Hyon-Chol ; Park, Soon-Yeol ; Kim, Nam-Joo ; Yoo, Kwang-Dong ; Hutter, Lou N.
Author_Institution :
Analog Foundry Bus. Unit, Dongbu HiTek, Bucheon, South Korea
Abstract :
0.18μm BCD technology with the best-in-class nLDMOS is presented. The drift of nLDMOS is optimized to ensure lowest Rsp by using multi-implants and appropriate thermal recipe. The optimized 24V nLDMOS has BVDSS=36V and Rsp=14.5 mΩ-mm2. Electrical SOA and long-term hot electron (HE) SOA are also evaluated. The maximum operating voltage less than 10% degradation of on-resistance is 24.4V.
Keywords :
MOSFET; hot electron transistors; BCD technology; best-in-class nLDMOS; long-term hot electron SOA; size 0.18 mum; voltage 7 V to 30 V; Breakdown voltage; Doping; Electric breakdown; Energy management; Foundries; Logic design; Logic devices; Moon; Power semiconductor devices; Semiconductor optical amplifiers;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
Conference_Location :
Hiroshima
Print_ISBN :
978-1-4244-7718-0
Electronic_ISBN :
1943-653X
