Title :
Application of GaAs pHEMT technology for efficient high-frequency switching regulators
Author :
Pala, Vipindas ; Peng, Han ; Hella, Mona ; Chow, T. Paul
Author_Institution :
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
The potential of GaAs pHEMT technology for low-voltage high-frequency power switching applications is discussed with a view towards their application for power supplies in portable electronic systems. The design and implementation of a 4.5V-to-3.3V buck converter power IC utilizing an enhancement mode pHEMT high side switch is demonstrated. The fabricated buck circuit is capable of operating at switching frequencies ranging from 100-MHz. While operating from a 4.5V supply a power efficiency of 87% is obtained at 100MHz when the output voltage is 3.3V and current is 500mA.
Keywords :
field effect transistor switches; power convertors; power integrated circuits; buck converter power IC; frequency 100 MHz; high-frequency switching regulators; low-voltage high-frequency power switching application; pHEMT technology; portable electronic system; power supply; voltage 3.3 V to 4.5 V; Batteries; Driver circuits; Gallium arsenide; Handheld computers; Low voltage; PHEMTs; Power semiconductor switches; Regulators; Switching converters; Switching frequency;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
Conference_Location :
Hiroshima
Print_ISBN :
978-1-4244-7718-0
Electronic_ISBN :
1943-653X
