Title :
BJT application expansion by insertion of superjunction
Author :
Théolier, L. ; Benboujema, C. ; Schellmanns, A. ; Batut, N. ; Raingeaud, Y. ; Quoirin, J.-B.
Author_Institution :
Lab. de Microelectron. de Puissance, Univ. Francois Rabelais, Tours, France
Abstract :
In this paper, some high voltage Bipolar Junction Transistors are presented and compared in order to suggest a switch for household appliances with fully turn-on, turn-off control. For the first time, a comparative theoretical study, using 2D simulations, shows that concepts like the “superjunction” improve the static behaviour of conventional BJT. These new structures are compared with a SJMOSFET and an IGBT. The new BJT exhibits lower static losses than SJMOSFET and gives up an interest in bipolar structure.
Keywords :
MOSFET; bipolar transistors; insulated gate bipolar transistors; BJT application expansion; IGBT; SJMOSFET; bipolar structure; high voltage bipolar junction transistors; household appliances; static losses; superjunction insertion; turn-off control; turn-on control; Conductivity; Current density; Doping; Epitaxial layers; Home appliances; Insulated gate bipolar transistors; Microelectronics; Power semiconductor devices; Switches; Voltage control;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
Conference_Location :
Hiroshima
Print_ISBN :
978-1-4244-7718-0
Electronic_ISBN :
1943-653X
