Title :
Towards a universal model for hot carrier degradation in DMOS transistors
Author :
Moens, P. ; Varghese, D. ; Alam, M.
Author_Institution :
Power Technol. Centre-Corp. R&D, ON Semicond. Belgium, Oudenaarde, Belgium
Abstract :
In this paper, it is for the first time shown that integrated DMOS transistors exhibit a “universal” on-state degradation characteristic, which is physically explained by the Si-O Bond-Dispersion model. The model is verified on a lateral DMOS transistor integrated in a 0.7 μm smart power technology.
Keywords :
MOS integrated circuits; MOSFET; hot carriers; power integrated circuits; DMOS transistors; bond-dispersion model; hot carrier degradation; on-state degradation characteristic; smart power technology; universal model; Bonding; CMOS technology; Degradation; Electric variables measurement; Hot carriers; Power semiconductor devices; Research and development; Semiconductor optical amplifiers; Stress measurement; Time measurement;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
Conference_Location :
Hiroshima
Print_ISBN :
978-1-4244-7718-0
Electronic_ISBN :
1943-653X
