Title :
Second-generation one chip li-ion battery protection IC with an Asymmetric Bidirectional Trench Lateral Power MOSFET
Author :
Sawada, M. ; Arai, H. ; Takahashi, H. ; Kitamura, A. ; Tada, G. ; Fujishima, N.
Author_Institution :
Fuji Electr. Holdings Co., Ltd., Matsumoto, Japan
Abstract :
Due to the wide distribution of cellular phones, lithium-ion battery protection ICs are required to further reduce their sizes and costs. Because of asymmetric requirement of short-circuit current capability, an Asymmetric Bidirectional Trench Lateral Power MOSFET (AB-TLPM) is proposed as integrated switches. The AB-TLPM has an asymmetric P+/N+ source design and improves maximum current density by 70% during the short-circuit mode. The AB-TLPM with reduced channel length achieves an excellent specific on-resistance of 7.4 mΩ-mm2, which is 40% better than the first generation bidirectional TLPM (Bi-TLPM). The die size is 20% smaller than the first-generation one even though the integrated switch exhibits a better on-resistance of 38mΩ with sufficient short-circuit handling capability.
Keywords :
mobile handsets; power MOSFET; power integrated circuits; secondary cells; switches; asymmetric bidirectional trench lateral power MOSFET; cellular phones; current density; integrated switches; reduced channel length; second-generation one chip Li-ion battery protection IC; short-circuit current capability; Batteries; Cellular phones; Costs; Integrated circuit technology; MOSFET circuits; Power MOSFET; Power integrated circuits; Power system protection; Switches; Switching circuits;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
Conference_Location :
Hiroshima
Print_ISBN :
978-1-4244-7718-0
Electronic_ISBN :
1943-653X