Title :
Analysis of transient characteristics of lateral IGBTs and diodes on silicon-on-insulator substrates with trenched buried oxide structure
Author :
Shiraki, Satoshi ; Ashida, Yoichi ; Takahashi, Shigeki ; Tokura, Norihito
Author_Institution :
Electron. Device R&D Dept., DENSO Corp., Kota, Japan
Abstract :
We have investigated the dynamic characteristics of lateral IGBTs and diodes on SOI with trenched buried oxide (Box) layers by carrying out device simulations under an inductive load. For the first time, we have found that the collector current of the lateral IGBT with the trenched Box layer decays in a considerably relaxed fashion during the turn-off transient and exhibits a long tail. Further, the collector voltage shows a remarkably large surge. These phenomena are explained by the retarded flow of holes along the Box surface because of the trench sidewalls.
Keywords :
insulated gate bipolar transistors; semiconductor device models; semiconductor diodes; IGBT; SOI; collector current; diodes; silicon-on-insulator substrates; trenched Box layer decays; trenched buried oxide structure; Diodes; Insulated gate bipolar transistors; Silicon on insulator technology; Transient analysis;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
Conference_Location :
Hiroshima
Print_ISBN :
978-1-4244-7718-0
Electronic_ISBN :
1943-653X
