DocumentCode
525896
Title
Analysis of transient characteristics of lateral IGBTs and diodes on silicon-on-insulator substrates with trenched buried oxide structure
Author
Shiraki, Satoshi ; Ashida, Yoichi ; Takahashi, Shigeki ; Tokura, Norihito
Author_Institution
Electron. Device R&D Dept., DENSO Corp., Kota, Japan
fYear
2010
fDate
6-10 June 2010
Firstpage
261
Lastpage
264
Abstract
We have investigated the dynamic characteristics of lateral IGBTs and diodes on SOI with trenched buried oxide (Box) layers by carrying out device simulations under an inductive load. For the first time, we have found that the collector current of the lateral IGBT with the trenched Box layer decays in a considerably relaxed fashion during the turn-off transient and exhibits a long tail. Further, the collector voltage shows a remarkably large surge. These phenomena are explained by the retarded flow of holes along the Box surface because of the trench sidewalls.
Keywords
insulated gate bipolar transistors; semiconductor device models; semiconductor diodes; IGBT; SOI; collector current; diodes; silicon-on-insulator substrates; trenched Box layer decays; trenched buried oxide structure; Diodes; Insulated gate bipolar transistors; Silicon on insulator technology; Transient analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
Conference_Location
Hiroshima
ISSN
1943-653X
Print_ISBN
978-1-4244-7718-0
Electronic_ISBN
1943-653X
Type
conf
Filename
5543986
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