DocumentCode :
525912
Title :
A new p-channel bidirectional trench power MOSFET for battery charging and protection
Author :
Robb, Francine ; Ball, Alan ; Huang, Kirk
Author_Institution :
ON Semicond., Phoenix, AZ, USA
fYear :
2010
fDate :
6-10 June 2010
Firstpage :
405
Lastpage :
408
Abstract :
A new p-channel bidirectional power MOSFET (Bi-DFET) for 15-30V battery charging applications is detailed. A specially-designed bidirectional trench MOSFET was built on chip with lateral PMOS devices that connect the trench FET body to the source/drain terminal of the highest potential. Bi-DFET prototypes had greater than 2.5X lower specific on-resistance than two back-to-back standard trench MOSFETs, which are commonly used in bidirectional sockets. Thus this device is very promising for reducing the device size in “space sensitive” applications.
Keywords :
battery management systems; power MOSFET; Bi-DFET; battery charging; battery protection; bidirectional socket; lateral PMOS device; p-channel bidirectional trench power MOSFET; space sensitive application; Batteries; MOSFET circuits; Power MOSFET; Protection;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
Conference_Location :
Hiroshima
ISSN :
1943-653X
Print_ISBN :
978-1-4244-7718-0
Electronic_ISBN :
1943-653X
Type :
conf
Filename :
5544012
Link To Document :
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