DocumentCode
525915
Title
Development of ultrasonic welding for IGBT module structure
Author
Nishimura, Yoshitaka ; Kido, Kazumasa ; Momose, Fumihiko ; Goto, Tomoaki
Author_Institution
Semicond. Group, Fuji Electr. Syst., Matsumoto, Japan
fYear
2010
fDate
6-10 June 2010
Firstpage
293
Lastpage
296
Abstract
This paper presents the ultrasonic welding technique for the copper terminals of large current, high reliability IGBT modules. Investigated topics are the strength of the bonding inferred from the microstructure, the effect of terminal bonding location on the damage to the insulator layer of module structure, and the reliability of large IGBT modules with the ultrasonic welding comparing with conventional soldering.
Keywords
insulated gate bipolar transistors; soldering; ultrasonic welding; copper terminal; high reliability IGBT module structure; microstructure; soldering; terminal bonding; ultrasonic welding; Aluminum; Bonding; Copper; Insulated gate bipolar transistors; Packaging; Power system reliability; Soldering; Solid state circuits; Welding; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
Conference_Location
Hiroshima
ISSN
1943-653X
Print_ISBN
978-1-4244-7718-0
Electronic_ISBN
1943-653X
Type
conf
Filename
5544018
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