Large current capability 270V lateral IGBT with multi-emitter

Author

Sakano, J. ; Shirakawa, S. ; Hara, K. ; Yabuki, S. ; Wada, S. ; Noguchi, J. ; Wada, M.

Author_Institution

Hitachi Res. Lab., Hitachi Ltd., Hitachi, Japan

fYear

2010

fDate

6-10 June 2010

Firstpage

83

Lastpage

86

Abstract

We have developed a lateral multi-emitter channel IGBT that has large current capability for plasma display panel (PDP) scan driver ICs. By introducing a hole barrier layer that supports uniform action of each channel, a low on state voltage drop of 1.8 V at a large current density of 760 A/cm² and large saturation current density over 4000A/cm² at blocking voltage of 270 V were achieved in a 0.25 μm 8-inch SOI isolation process. The multi-emitter structure also improves chip area efficiency by using a narrow IGBT cell width and short circuit capability.

Keywords

current density; driver circuits; flat panel displays; insulated gate bipolar transistors; plasma displays; power integrated circuits; silicon-on-insulator; SOI isolation process; large current density; lateral multiemitter channel IGBT; narrow IGBT cell width; plasma display panel scan driver IC; short circuit capability; size 0.25 mum; size 8 inch; voltage 1.8 V; voltage 270 V; Circuits; Current density; Electron emission; Immune system; Insulated gate bipolar transistors; Laboratories; Low voltage; Plasma displays; Power semiconductor devices; Semiconductor optical amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on

Conference_Location

Hiroshima

ISSN

1943-653X

Print_ISBN

978-1-4244-7718-0

Electronic_ISBN

1943-653X

Type

conf

Filename

5544316