Title :
High surge current ruggedness of 5kV class 4H-SiC SiCGT
Author :
Ogata, S. ; Asano, K. ; Sugawara, Y. ; Tanaka, A. ; Miyanagi, Y. ; Nakayama, K. ; Izumi, T. ; Hayashi, T. ; Nishimura, M.
Author_Institution :
Power Eng. R&D Center, Kansai Electr. Power Co., Amagasaki, Japan
Abstract :
The ruggedness of SiCGT (SiC Commutated Gate Turn-off Thyristor) was investigated. The SiCGT was confirmed to operate at over 1200°C, a higher temperature than Si device´s destruction temperature. The SiCGT endured a large current of over 2000A (2470A/cm2) per one chip. Positive temperature coefficient resistor behavior could be found during the destruction of SiCGT, which was different from the destruction of Si diodes.
Keywords :
silicon compounds; thyristors; SiC commutated gate turn-off thyristor; class 4H-SiC SiCGT; high surge current ruggedness; voltage 5 kV; Fault currents; Packaging; Pulse width modulation inverters; Resistors; Semiconductor diodes; Silicon carbide; Surge protection; Temperature; Testing; Voltage;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
Conference_Location :
Hiroshima
Print_ISBN :
978-1-4244-7718-0
Electronic_ISBN :
1943-653X
