• DocumentCode
    526038
  • Title

    High surge current ruggedness of 5kV class 4H-SiC SiCGT

  • Author

    Ogata, S. ; Asano, K. ; Sugawara, Y. ; Tanaka, A. ; Miyanagi, Y. ; Nakayama, K. ; Izumi, T. ; Hayashi, T. ; Nishimura, M.

  • Author_Institution
    Power Eng. R&D Center, Kansai Electr. Power Co., Amagasaki, Japan
  • fYear
    2010
  • fDate
    6-10 June 2010
  • Firstpage
    369
  • Lastpage
    372
  • Abstract
    The ruggedness of SiCGT (SiC Commutated Gate Turn-off Thyristor) was investigated. The SiCGT was confirmed to operate at over 1200°C, a higher temperature than Si device´s destruction temperature. The SiCGT endured a large current of over 2000A (2470A/cm2) per one chip. Positive temperature coefficient resistor behavior could be found during the destruction of SiCGT, which was different from the destruction of Si diodes.
  • Keywords
    silicon compounds; thyristors; SiC commutated gate turn-off thyristor; class 4H-SiC SiCGT; high surge current ruggedness; voltage 5 kV; Fault currents; Packaging; Pulse width modulation inverters; Resistors; Semiconductor diodes; Silicon carbide; Surge protection; Temperature; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
  • Conference_Location
    Hiroshima
  • ISSN
    1943-653X
  • Print_ISBN
    978-1-4244-7718-0
  • Electronic_ISBN
    1943-653X
  • Type

    conf

  • Filename
    5544706
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=526038