Title :
Deep melt activation using laser thermal annealing for IGBT thin wafer technology
Author :
Gutt, Thomas ; Schulze, Holger
Author_Institution :
Infineon Technol. AG, Neubiberg, Germany
Abstract :
A new method of activating the backside Emitter of an IGBT or a freewheeling Diode will be introduced. A high power UV Laser is used to activate a 1, 5 cm × 1, 5 cm area with one single laser shot. This allows a process improvement for thin wafer for IGBT and Diodes in the 600 V - 1200 V range. The process is a major step in further shrinking the device thickness and thereby reducing the on state voltage and the switching losses.
Keywords :
insulated gate bipolar transistors; laser beam annealing; semiconductor diodes; IGBT thin wafer technology; deep melt activation; freewheeling diode; high power UV laser; laser thermal annealing; voltage 600 V to 1200 V; Annealing; Insulated gate bipolar transistors;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
Conference_Location :
Hiroshima
Print_ISBN :
978-1-4244-7718-0
Electronic_ISBN :
1943-653X
