DocumentCode
526043
Title
1400 volt, 5 mΩ-cm2 SiC MOSFETs for high-speed switching
Author
Matocha, Kevin ; Losee, Pete ; Arthur, Steve ; Nasadoski, Jeff ; Glaser, John ; Dunne, Greg ; Stevanovic, Ljubisa
Author_Institution
GE Global Res. Center, Niskayuna, NY, USA
fYear
2010
fDate
6-10 June 2010
Firstpage
365
Lastpage
368
Abstract
We have demonstrated 1400V SiC power MOSFETs with a specific on-resistance of 5 mΩ-cm2. Discrete SiC MOSFETs (4.5 mm × 4.5 mm) have been demonstrated with a total on-resistance of 30 mΩ. SiC MOSFETs were packaged and characterized for switching losses. When switched at 600V and 15A, SiC MOSFETs with size of 2.25mm × 4.5 mm have a total switching energy of 0.26 mJ per pulse. These devices were characterized in a buck converter to evaluate the device performance in switching applications. SiC gate oxide reliability is predicted to achieve lifetimes > 100 years at 250°C.
Keywords
power MOSFET; semiconductor device manufacture; semiconductor device reliability; silicon compounds; wide band gap semiconductors; SiC; buck converter; current 15 A; energy 0.26 mJ; gate oxide reliability; high-speed switching; power MOSFET; resistance 30 mohm; size 2.25 mm; size 4.5 mm; temperature 250 C; time 100 year; voltage 1400 V; voltage 600 V; Annealing; Insulated gate bipolar transistors; MOSFETs; Plastic packaging; Rectifiers; Schottky diodes; Silicon carbide; Silicon devices; Switching loss; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
Conference_Location
Hiroshima
ISSN
1943-653X
Print_ISBN
978-1-4244-7718-0
Electronic_ISBN
1943-653X
Type
conf
Filename
5544725
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