A concept of a novel edge termination technique: Junction termination (RJT)

This paper presents a novel junction termination technique, named Recess Junction Termination (RJT), for power devices. This new junction termination improves the breakdown voltage of a planar junction by a silicon recess located to create a positive bevel, which reduces the peak of electric field. The RJT can reduce a thermal budget for the RESURF (REduced SURface Field) layer by the silicon recess, and has compatibility with a fine-pitch process due to a planarization process using Chemical Mechanical Polish (CMP) treatments. After numerous simulations to optimize the structure parameters, we have succeeded in obtaining sufficient blocking capabilities of pn-RJT-diodes, the voltage ratings of which are from 75 V to 1700 V.