DocumentCode :
526074
Title :
A high voltage Super-Junction NLDMOS device implemented in 0.13µm SOI based Smart Power IC technology
Author :
Zhu, R. ; Khemka, V. ; Khan, T. ; Huang, W. ; Cheng, X. ; Hui, P. ; Ger, M. ; Rodriquez, P.
Author_Institution :
Freescale Semicond., Tempe, AZ, USA
fYear :
2010
fDate :
6-10 June 2010
Firstpage :
79
Lastpage :
82
Abstract :
This paper reports Super-Junction NLDMOS device implemented in Freescale´s 0.13 μm SOI based Smart Power IC technology. This SJ device can be operated at both high and low side applications without back-gate effect. It achieves breakdown voltage of 111V and Rds.on × area of 138 mΩ.mm2 with robust characteristics.
Keywords :
MOS integrated circuits; power integrated circuits; silicon-on-insulator; Freescale SOI; breakdown voltage; high voltage super-junction NLDMOS device; size 0.13 mum; smart power IC technology; voltage 111 V; Automotive applications; Current measurement; Fuels; Implants; Logic devices; Manufacturing; Power integrated circuits; Power semiconductor devices; Robustness; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
Conference_Location :
Hiroshima
ISSN :
1943-653X
Print_ISBN :
978-1-4244-7718-0
Electronic_ISBN :
1943-653X
Type :
conf
Filename :
5544882
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=526074
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