Using multiplication to evaluate HCI degradation in HV-SOI devices

In this work we present an alternative Hot Carrier Injection (HCI) characterisation technique for SOI based HV devices based on the analysis of the avalanche current at sub-threshold gate bias as a function of applied drain voltage (multiplication). This technique is shown to enable an accurate extraction of the electrical field distribution within the device which, when used during HCI stress, pinpoints the exact location of the charge injection without need of extra contacts, field plates or special measurement structures.