Title :
A new 1200V HVIC with a novel high voltage Pch-MOS
Author :
Yoshino, M. ; Shimizu, K. ; Terashima, T.
Author_Institution :
Power Device Works, Mitsubishi Electr. Corp., Fukuoka, Japan
Abstract :
A new 1200V HVIC, including both a high voltage Nch-LDMOS and a high voltage Pch-MOS, is successfully fabricated without any additional process steps to our 600V HVIC. The 1200V Nch-LDMOS is realized with benefit of the 2nd Generation Divided RESURF Structure. The 1200V Pch-MOS is also realized with a novel multi-striped drain structure. As a result of the new drain structure, more than three times larger output current compared to a conventional one is obtained without decreasing the breakdown voltage.
Keywords :
MOS integrated circuits; power integrated circuits; HVIC; breakdown voltage; divided RESURF sructure; high voltage Nch-LDMOS; high voltage Pch-MOS; high voltage integrated circuit; multi-striped drain structure; voltage 1200 V; voltage 600 V; Conductivity; Dielectrics; Diodes; Electrodes; Leakage current; Logic devices; Low voltage; Multichip modules; Power semiconductor devices; Voltage control;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
Conference_Location :
Hiroshima
Print_ISBN :
978-1-4244-7718-0
Electronic_ISBN :
1943-653X
