Low power multi-band CMOS receiver front-end

A Multi-band CMOS front-end was designed and fabricated in a 0.13μm CMOS process. The front-end employs a common-gate low noise amplifier (LNA) with capacitive cross coupling (CCC) technique and a double balanced mixer. The band selection is performed by switching capacitors in and out of the LNA load, changing the resonance frequencies ranging from 2.5GHz to 4.5GHz in 16 different frequency bands. The measured noise figure is from 2.8dB in the higher bands to 4dB in lower bands. The conversion gain ranges from 20dB in the higher bands down to 14.5dB in the lower bands, and the third order intercept point (IIP₃) is above -14dBm. The input matching S₁₁ is well below -10dB at all frequencies. The front-end draws 3.85mA from a 1.2V power supply.