DocumentCode
527953
Title
Development of vertical superlattices in silicon for on-chip thermal management
Author
Parasuraman, J. ; Angelescu, D. ; Basset, P. ; Bardoux, M.
Author_Institution
Lab. ESYCOM, Univ. Paris-Est, Paris, France
fYear
2010
fDate
18-21 July 2010
Firstpage
1
Lastpage
4
Abstract
In this paper, we propose a novel approach to on-chip cooling by thermionic emission by using vertical superlattices fabricated directly into the silicon wafer as opposed to conventional planar additive deposition methods used by most other groups. The advantages of this method are (i) significantly lower fabrication costs and (ii) adequate number of superlattice layers translating to higher efficiency. Initial fabrication has been completed on micro-scale `superlattices´ and work on `nano´-superlattices for actual thermionic emission and on-chip cooling are on-going. Measurements of thermal conductivity have been proposed to be made on the completed devices using the 2ω method, which is also described here. Further work will lead to conclusive results from this approach.
Keywords
cooling; thermal management (packaging); on-chip cooling; on-chip thermal management; planar additive deposition method; silicon wafer; superlattice layers; thermal conductivity; thermionic emission; vertical superlattices; Conductivity; Copper; Silicon; Superlattices; Thermal conductivity; DRIE; On-chip cooling; thermionic emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Ph.D. Research in Microelectronics and Electronics (PRIME), 2010 Conference on
Conference_Location
Berlin
Print_ISBN
978-1-4244-7905-4
Type
conf
Filename
5587157
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