• DocumentCode
    527953
  • Title

    Development of vertical superlattices in silicon for on-chip thermal management

  • Author

    Parasuraman, J. ; Angelescu, D. ; Basset, P. ; Bardoux, M.

  • Author_Institution
    Lab. ESYCOM, Univ. Paris-Est, Paris, France
  • fYear
    2010
  • fDate
    18-21 July 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this paper, we propose a novel approach to on-chip cooling by thermionic emission by using vertical superlattices fabricated directly into the silicon wafer as opposed to conventional planar additive deposition methods used by most other groups. The advantages of this method are (i) significantly lower fabrication costs and (ii) adequate number of superlattice layers translating to higher efficiency. Initial fabrication has been completed on micro-scale `superlattices´ and work on `nano´-superlattices for actual thermionic emission and on-chip cooling are on-going. Measurements of thermal conductivity have been proposed to be made on the completed devices using the 2ω method, which is also described here. Further work will lead to conclusive results from this approach.
  • Keywords
    cooling; thermal management (packaging); on-chip cooling; on-chip thermal management; planar additive deposition method; silicon wafer; superlattice layers; thermal conductivity; thermionic emission; vertical superlattices; Conductivity; Copper; Silicon; Superlattices; Thermal conductivity; DRIE; On-chip cooling; thermionic emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ph.D. Research in Microelectronics and Electronics (PRIME), 2010 Conference on
  • Conference_Location
    Berlin
  • Print_ISBN
    978-1-4244-7905-4
  • Type

    conf

  • Filename
    5587157