DocumentCode
528045
Title
Fabrication of evanescent semiconductor optical isolators for high saturation power
Author
Goto, S. ; Shimizu, H.
Author_Institution
Dept. of Electr. & Electron. Eng., Tokyo Univ. of Agric. & Technol., Tokyo, Japan
fYear
2010
fDate
5-9 July 2010
Firstpage
838
Lastpage
839
Abstract
We report fabrication and characterization of evanescent semiconductor optical isolators. The fabricated device showed 7.4dB/mm optical isolation and linear gain characteristics. These semiconductor isolators are not affected by cross gain saturation due to reflected light.
Keywords
optical isolators; semiconductor devices; cross gain saturation; evanescent semiconductor optical isolators; high-saturation power; Isolators; Optical bistability; Optical device fabrication; Optical imaging; Optical reflection; Optical saturation; Optical surface waves;
fLanguage
English
Publisher
ieee
Conference_Titel
OptoElectronics and Communications Conference (OECC), 2010 15th
Conference_Location
Sapporo
Print_ISBN
978-1-4244-6785-3
Type
conf
Filename
5587990
Link To Document