Title :
Fabrication of evanescent semiconductor optical isolators for high saturation power
Author :
Goto, S. ; Shimizu, H.
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Univ. of Agric. & Technol., Tokyo, Japan
Abstract :
We report fabrication and characterization of evanescent semiconductor optical isolators. The fabricated device showed 7.4dB/mm optical isolation and linear gain characteristics. These semiconductor isolators are not affected by cross gain saturation due to reflected light.
Keywords :
optical isolators; semiconductor devices; cross gain saturation; evanescent semiconductor optical isolators; high-saturation power; Isolators; Optical bistability; Optical device fabrication; Optical imaging; Optical reflection; Optical saturation; Optical surface waves;
Conference_Titel :
OptoElectronics and Communications Conference (OECC), 2010 15th
Conference_Location :
Sapporo
Print_ISBN :
978-1-4244-6785-3
