DocumentCode
528046
Title
Wide temperature range operation of 10-/40-Gbps 1.55-μm electroabsorption modulator integrated DFB laser
Author
Kobayashi, W. ; Arai, M. ; Fujiwara, N. ; Fujisawa, T. ; Tadokoro, T. ; Tsuzuki, K. ; Yamanaka, T. ; Kano, F.
Author_Institution
NTT Photonics Labs., NTT Corp., Atsugi, Japan
fYear
2010
fDate
5-9 July 2010
Firstpage
840
Lastpage
841
Abstract
10-Gb/s 80-km and 40-Gb/s 2-km SMF transmissions with low power penalty over wide temperature range are demonstrated with a 1.55-μm InGaAlAs EAM-integrated DFB laser. These devices are suitable for use as 10-/40-Gb/s uncooled light sources.
Keywords
III-V semiconductors; aluminium compounds; distributed feedback lasers; electroabsorption; gallium compounds; indium compounds; integrated optics; integrated optoelectronics; light sources; optical modulation; optical transmitters; semiconductor lasers; InGaAlAs; bit rate 10 Gbit/s; bit rate 40 Gbit/s; distance 2 km; distance 80 km; electroabsorption modulator integrated DFB laser; optical transmissions; optical transmitters; power penalty; uncooled light sources; wavelength 1.55 mum; Extinction ratio; Light sources; Modulation; Power generation; Quantum well devices; Temperature dependence; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
OptoElectronics and Communications Conference (OECC), 2010 15th
Conference_Location
Sapporo
Print_ISBN
978-1-4244-6785-3
Type
conf
Filename
5587991
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