Title :
An 8.7 GHz Si photodiode in standard 0.18-μm CMOS technology
Author :
Chou, Fang-ping ; Wang, Ching-Wen ; Chen, Guan-Yu ; Hsin, Yue-Ming
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
Abstract :
This work investigates a new Si photodiode by 0.18-p, m CMOS technology for optical communication at 850-nm. The structure of the proposed Si PD is in octagonal shape and consists of PN diodes with deep N-well surrounded. An extra voltage on deep N-well is required to bias deep N-well to block holes and collect electrons. The measured bandwidth and responsivity are 8.7 GHz and 0.018 A/W, respectively, while biasing at 11.4 V.
Keywords :
CMOS integrated circuits; diodes; elemental semiconductors; optical communication; photodiodes; silicon; CMOS technology; PN diodes; Si; bandwidth measurement; frequency 8.7 GHz; optical communication; photodiode; size 0.18 mum; size 850 nm; voltage 11.4 V; Bandwidth; CMOS integrated circuits; CMOS technology; Charge carrier processes; Photodiodes; Silicon; Substrates;
Conference_Titel :
OptoElectronics and Communications Conference (OECC), 2010 15th
Conference_Location :
Sapporo
Print_ISBN :
978-1-4244-6785-3
