Title :
InAlAs avalanche photodiodes for gated Geiger mode single photon counting
Author :
Nakata, T. ; Mizuki, E. ; Tsukuda, T. ; Takahashi, S. ; Hatakeyama, H. ; Anan, T. ; Makita, K. ; Tomita, A.
Author_Institution :
Nano Electron. Res. Labs., NEC Corp., Otsu, Japan
Abstract :
InAlAs-APDs were developed and characterized its detection performances for single photon counting. We succeed to improve the signal-to-noise ratio not only by the crystal quality but also by the multiplication layer design.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; indium compounds; photon counting; APD; InAlAs; avalanche photodiodes; crystal quality; detection performances; gated Geiger mode single-photon counting; multiplication layer design; signal-to-noise ratio; Avalanche photodiodes; Crystals; Indium compounds; Logic gates; Performance evaluation; Photonics; Signal to noise ratio;
Conference_Titel :
OptoElectronics and Communications Conference (OECC), 2010 15th
Conference_Location :
Sapporo
Print_ISBN :
978-1-4244-6785-3
