Title :
25.8-Gbps direct modulation of 1.3-μm-wavelength AlGalnAs distributed reflector lasers
Author :
Otsubo, K. ; Matsuda, M. ; Uetake, A. ; Okumura, S. ; Tomabechi, S. ; Ekawa, M. ; Yamamoto, T.
Abstract :
AlGaInAs distributed-reflector lasers with 4 different wavelengths on LAN-WDM grid were fabricated using the same MQW active layers. These lasers provided output power of over 10 mW and clear eye-opening under 25.8-Gbps direct modulation at 50C.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium compounds; optical fibre LAN; semiconductor lasers; wavelength division multiplexing; AlGaInAs; LAN-WDM; MQW active layers; bit rate 25.8 Gbit/s; distributed reflector lasers; eye-opening; temperature 50 degC; wavelength 1.3 mum; Fiber lasers; Modulation; Optical waveguides; Power lasers; Quantum well devices; Waveguide lasers;
Conference_Titel :
OptoElectronics and Communications Conference (OECC), 2010 15th
Conference_Location :
Sapporo
Print_ISBN :
978-1-4244-6785-3
