• DocumentCode
    52822
  • Title

    Inverted Organic Photodetectors With ZnO Electron-Collecting Buffer Layers and Polymer Bulk Heterojunction Active Layers

  • Author

    Jaehoon Jeong ; Sungho Nam ; Hwajeong Kim ; Youngkyoo Kim

  • Author_Institution
    Dept. of Chem. Eng., Kyungpook Nat. Univ., Daegu, South Korea
  • Volume
    20
  • Issue
    6
  • fYear
    2014
  • fDate
    Nov.-Dec. 2014
  • Firstpage
    130
  • Lastpage
    136
  • Abstract
    We report inverted-type organic photodetectors with zinc oxide (ZnO) electron-collecting buffer layers and polymer:fullerene bulk heterojunction active layers. A visible light was detected by the inverted organic photodetectors when a background UV light was ON, whereas no photocurrent signal was measured for visible lights without the background UV light. Interestingly, UV lights solely were successfully detected without any surrounding UV light. The present devices exhibited fast and stable photo-responses under modulated or continuous UV-visible lights.
  • Keywords
    II-VI semiconductors; buffer layers; conducting polymers; fullerene compounds; organic semiconductors; photodetectors; semiconductor heterojunctions; wide band gap semiconductors; zinc compounds; ZnO; background UV light; electron-collecting buffer layers; inverted organic photodetectors; photo-responses; polymer:fullerene bulk heterojunction active layers; visible light; Current measurement; Lighting; Photoconductivity; Photodetectors; Voltage measurement; Wavelength measurement; Zinc oxide; Organic photodetector (OPD); P3HT/PC61BM; UV-visible detection; ZnO;
  • fLanguage
    English
  • Journal_Title
    Selected Topics in Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    1077-260X
  • Type

    jour

  • DOI
    10.1109/JSTQE.2014.2354649
  • Filename
    6891138