DocumentCode
52822
Title
Inverted Organic Photodetectors With ZnO Electron-Collecting Buffer Layers and Polymer Bulk Heterojunction Active Layers
Author
Jaehoon Jeong ; Sungho Nam ; Hwajeong Kim ; Youngkyoo Kim
Author_Institution
Dept. of Chem. Eng., Kyungpook Nat. Univ., Daegu, South Korea
Volume
20
Issue
6
fYear
2014
fDate
Nov.-Dec. 2014
Firstpage
130
Lastpage
136
Abstract
We report inverted-type organic photodetectors with zinc oxide (ZnO) electron-collecting buffer layers and polymer:fullerene bulk heterojunction active layers. A visible light was detected by the inverted organic photodetectors when a background UV light was ON, whereas no photocurrent signal was measured for visible lights without the background UV light. Interestingly, UV lights solely were successfully detected without any surrounding UV light. The present devices exhibited fast and stable photo-responses under modulated or continuous UV-visible lights.
Keywords
II-VI semiconductors; buffer layers; conducting polymers; fullerene compounds; organic semiconductors; photodetectors; semiconductor heterojunctions; wide band gap semiconductors; zinc compounds; ZnO; background UV light; electron-collecting buffer layers; inverted organic photodetectors; photo-responses; polymer:fullerene bulk heterojunction active layers; visible light; Current measurement; Lighting; Photoconductivity; Photodetectors; Voltage measurement; Wavelength measurement; Zinc oxide; Organic photodetector (OPD); P3HT/PC61BM; UV-visible detection; ZnO;
fLanguage
English
Journal_Title
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
1077-260X
Type
jour
DOI
10.1109/JSTQE.2014.2354649
Filename
6891138
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