DocumentCode
528225
Title
The responsivity improvement of waveguide photodetector with InP crystallographic slope and tapered SiOx facet integration
Author
Yang, Chyi-Da ; Chen, Chung-Nan ; Lei, Po-Hsun ; Lee, Chih-Yu
Author_Institution
Dept. of Microelectron. Eng., Nat. Kaohsiung Marine Univ., Kaohsiung, Taiwan
fYear
2010
fDate
5-9 July 2010
Firstpage
888
Lastpage
889
Abstract
The light input tapered-facet in front of the active region through a simple chemical etching enlarges substantially the light-coupling aperture and therefore assists the light collection of the thin absorption layer outside of its area. The improved responsivity of novel WGPDs is consistent with the theoretical simulation.
Keywords
III-V semiconductors; absorption coefficients; etching; gallium arsenide; indium compounds; integrated optics; optical fabrication; optical waveguides; photodetectors; silicon compounds; InGaAsP; InP; SiOx; chemical etching; crystallographic slope; light-coupling aperture; tapered facet integration; thin absorption layer; waveguide photodetector; Absorption; Chemicals; Etching; High speed optical techniques; Indium phosphide; Optical device fabrication; Optical waveguides;
fLanguage
English
Publisher
ieee
Conference_Titel
OptoElectronics and Communications Conference (OECC), 2010 15th
Conference_Location
Sapporo
Print_ISBN
978-1-4244-6785-3
Type
conf
Filename
5588401
Link To Document