Title :
Silicon based novel photonic crystal waveguide fabrication and numerical characterization by Si-ion implantation and FDTD method
Author :
Umenyi, A.V. ; Honmi, M. ; Kawashiri, S. ; Shinagawa, T. ; Miura, K. ; Hanaizumi, O. ; Yamamoto, S. ; Inouye, A. ; Yoshikawa, M.
Author_Institution :
Grad. Sch. of Eng., Gunma Univ., Kiryu, Japan
Abstract :
A novel photonic crystal waveguide was fabricated utilizing Si-ion implantation and two-dimensional structures. The transmission and reflection properties of a straight line and two 60-degree bend waveguides were characterized numerically using finite-difference time-domain (FDTD) method.
Keywords :
elemental semiconductors; finite difference time-domain analysis; ion implantation; light reflection; light transmission; optical fabrication; optical waveguides; photonic crystals; silicon; silicon compounds; 2D waveguide structure; 60-degree bend waveguides; FDTD Method; SiO2:Si; finite-difference time-domain method; ion implantation; optical fabrication; reflection properties; silicon based novel photonic crystal waveguide; transmission properties; Finite difference methods; Lattices; Optical device fabrication; Optical waveguides; Silicon; Time domain analysis;
Conference_Titel :
OptoElectronics and Communications Conference (OECC), 2010 15th
Conference_Location :
Sapporo
Print_ISBN :
978-1-4244-6785-3
