• DocumentCode
    528245
  • Title

    Silicon based novel photonic crystal waveguide fabrication and numerical characterization by Si-ion implantation and FDTD method

  • Author

    Umenyi, A.V. ; Honmi, M. ; Kawashiri, S. ; Shinagawa, T. ; Miura, K. ; Hanaizumi, O. ; Yamamoto, S. ; Inouye, A. ; Yoshikawa, M.

  • Author_Institution
    Grad. Sch. of Eng., Gunma Univ., Kiryu, Japan
  • fYear
    2010
  • fDate
    5-9 July 2010
  • Firstpage
    878
  • Lastpage
    879
  • Abstract
    A novel photonic crystal waveguide was fabricated utilizing Si-ion implantation and two-dimensional structures. The transmission and reflection properties of a straight line and two 60-degree bend waveguides were characterized numerically using finite-difference time-domain (FDTD) method.
  • Keywords
    elemental semiconductors; finite difference time-domain analysis; ion implantation; light reflection; light transmission; optical fabrication; optical waveguides; photonic crystals; silicon; silicon compounds; 2D waveguide structure; 60-degree bend waveguides; FDTD Method; SiO2:Si; finite-difference time-domain method; ion implantation; optical fabrication; reflection properties; silicon based novel photonic crystal waveguide; transmission properties; Finite difference methods; Lattices; Optical device fabrication; Optical waveguides; Silicon; Time domain analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    OptoElectronics and Communications Conference (OECC), 2010 15th
  • Conference_Location
    Sapporo
  • Print_ISBN
    978-1-4244-6785-3
  • Type

    conf

  • Filename
    5588424
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=528245