DocumentCode :
528312
Title :
Linearity of carrier depletion based silicon optical modulators
Author :
Lo, Stanley M G ; Li, C. ; Tsang, H.K.
Author_Institution :
Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Shatin, China
fYear :
2010
fDate :
5-9 July 2010
Firstpage :
514
Lastpage :
515
Abstract :
We consider theoretically the linearity of silicon modulators. The reversed-biased modulation of hole concentration in silicon modulators can give 4.6dB improvement in Spurious Free Dynamic Range over conventional (linear electro-optic effect) III-V or LiNbO3 modulators.
Keywords :
electro-optical effects; optical modulation; silicon; carrier depletion; electro-optic effect; hole concentration; reversed-biased modulation; silicon optical modulators; spurious free dynamic range; Linearity; Nonlinear optics; Optical interferometry; Optical modulation; Optical waveguides; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
OptoElectronics and Communications Conference (OECC), 2010 15th
Conference_Location :
Sapporo
Print_ISBN :
978-1-4244-6785-3
Type :
conf
Filename :
5588504
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=528312
بازگشت