Title :
Optical gain and lasing from band-engineered Ge-on-Si at room temperature
Author :
Liu, Jifeng ; Sun, Xiaochen ; Camacho-Aguilera, Rodolfo ; Cai, Yan ; Kimerling, Lionel C. ; Michel, Jurgen
Author_Institution :
Microphotonics Center, Massachusetts Inst. of Technol., Cambridge, MA, USA
Abstract :
We present theoretical modeling and experimental results of optical gain and lasing from tensile-strained, n+ Ge-on-Si at room temperature. Compatible with silicon CMOS, these devices are ideal for large-scale electronic-photonic integration on Si.
Keywords :
elemental semiconductors; germanium; integrated optics; optical materials; semiconductor lasers; Ge; Si; band-engineered Ge-on-Si; large-scale electronic-photonic integration; optical gain; temperature 293 K to 298 K; tensile-strained Ge-on-Si; Doping; Fiber optics; Optical pumping; Optical waveguides; Silicon; Stimulated emission;
Conference_Titel :
OptoElectronics and Communications Conference (OECC), 2010 15th
Conference_Location :
Sapporo
Print_ISBN :
978-1-4244-6785-3
