Title :
Trench structure metal-oxide-semiconductor (MOS) solar cells with oxides prepared by anodization technique
Author :
Wang, Chih-Yao ; Hwu, Jenn-Gwo
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
This work presented the new trench structure of MOS solar cell with efficiency improved by the trap-assisted centers built on the side wall as the extra current path. The perimeter of electrode is critical for MOS solar cell.
Keywords :
MIS devices; anodisation; solar cells; MOS; anodization; electrode perimeter; metal-oxide-semiconductor solar cells; trap-assisted centers; trench structure solar cells; Current density; Electrodes; Insulators; Logic gates; Photovoltaic cells; Semiconductor device measurement; Temperature measurement;
Conference_Titel :
OptoElectronics and Communications Conference (OECC), 2010 15th
Conference_Location :
Sapporo
Print_ISBN :
978-1-4244-6785-3
