Title :
Temperature monitoring of Si wafer using optical low-coherence interferometry
Author :
Ohta, Takayuki ; Koshimizu, Chisio ; Ito, Masafumi
Author_Institution :
Fac. of Syst. Eng., Wakayama Univ., Wakayama, Japan
Abstract :
In order to control the processing such as plasma etching and plasma enhanced chemical vapor deposition precisely, the temperature of Si wafer was monitored by low coherence interferometry. The resolution of this method was less than 1°C.
Keywords :
chemical vapour deposition; light interferometry; semiconductor technology; sputter etching; Si wafer; optical low-coherence interferometry; plasma enhanced chemical vapor deposition; plasma etching; temperature monitoring; Optical fibers; Optical interferometry; Optical variables control; Plasma temperature; Silicon; Temperature measurement; low-coherence interferometry; plasma process; temperature measurement;
Conference_Titel :
SICE Annual Conference 2010, Proceedings of
Conference_Location :
Taipei
Print_ISBN :
978-1-4244-7642-8
