DocumentCode
529559
Title
Temperature monitoring of Si wafer using optical low-coherence interferometry
Author
Ohta, Takayuki ; Koshimizu, Chisio ; Ito, Masafumi
Author_Institution
Fac. of Syst. Eng., Wakayama Univ., Wakayama, Japan
fYear
2010
fDate
18-21 Aug. 2010
Firstpage
2937
Lastpage
2938
Abstract
In order to control the processing such as plasma etching and plasma enhanced chemical vapor deposition precisely, the temperature of Si wafer was monitored by low coherence interferometry. The resolution of this method was less than 1°C.
Keywords
chemical vapour deposition; light interferometry; semiconductor technology; sputter etching; Si wafer; optical low-coherence interferometry; plasma enhanced chemical vapor deposition; plasma etching; temperature monitoring; Optical fibers; Optical interferometry; Optical variables control; Plasma temperature; Silicon; Temperature measurement; low-coherence interferometry; plasma process; temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
SICE Annual Conference 2010, Proceedings of
Conference_Location
Taipei
Print_ISBN
978-1-4244-7642-8
Type
conf
Filename
5602882
Link To Document