DocumentCode :
530141
Title :
Radiation effects on high-K dielectrics. Measurement technique and first results
Author :
Salomone, L. Sambuco ; Kasulin, A. ; Inza, M. Garcia ; Lipovetzky, J. ; Redin, E. ; Carbonetto, S. ; Campabadal, F. ; Faigón, A.
Author_Institution :
Dept. de Fis., Univ. de Buenos Aires, Buenos Aires, Argentina
fYear :
2010
fDate :
1-9 Oct. 2010
Firstpage :
66
Lastpage :
70
Abstract :
The radiation response of MOS capacitors with HfO2 as insulator was investigated. The development of instrumental for such goal is presented. First results and analysis are presented.
Keywords :
MOS capacitors; hafnium compounds; high-k dielectric thin films; radiation effects; HfO2; MOS capacitors radiation response; high-k dielectric radiation effects; insulator; measurement technique; Capacitance-voltage characteristics; Electron traps; High K dielectric materials; Hysteresis; Logic gates; Radiation effects; Voltage measurement; High-K dielectrics; MOS; Radiation effects;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Argentine School of Micro-Nanoelectronics Technology and Applications (EAMTA), 2010
Conference_Location :
Montevideo
Print_ISBN :
978-1-4244-6747-1
Electronic_ISBN :
978-987-1620-14-2
Type :
conf
Filename :
5606371
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=530141
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