• DocumentCode
    530141
  • Title

    Radiation effects on high-K dielectrics. Measurement technique and first results

  • Author

    Salomone, L. Sambuco ; Kasulin, A. ; Inza, M. Garcia ; Lipovetzky, J. ; Redin, E. ; Carbonetto, S. ; Campabadal, F. ; Faigón, A.

  • Author_Institution
    Dept. de Fis., Univ. de Buenos Aires, Buenos Aires, Argentina
  • fYear
    2010
  • fDate
    1-9 Oct. 2010
  • Firstpage
    66
  • Lastpage
    70
  • Abstract
    The radiation response of MOS capacitors with HfO2 as insulator was investigated. The development of instrumental for such goal is presented. First results and analysis are presented.
  • Keywords
    MOS capacitors; hafnium compounds; high-k dielectric thin films; radiation effects; HfO2; MOS capacitors radiation response; high-k dielectric radiation effects; insulator; measurement technique; Capacitance-voltage characteristics; Electron traps; High K dielectric materials; Hysteresis; Logic gates; Radiation effects; Voltage measurement; High-K dielectrics; MOS; Radiation effects;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Argentine School of Micro-Nanoelectronics Technology and Applications (EAMTA), 2010
  • Conference_Location
    Montevideo
  • Print_ISBN
    978-1-4244-6747-1
  • Electronic_ISBN
    978-987-1620-14-2
  • Type

    conf

  • Filename
    5606371
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=530141