Study of Floating Gate MOS devices transients during switched bias irradiations

Switching bias dependent transients were observed in Floating Gate Metal Oxide Semiconductor (FGMOS) devices during irradiations when applying the Bias Controlled Cycled Measurement (BCCM) novel technique. The study of these transients gives information about the radiation generated charge distribution in FGMOS structures. Energy band diagrams are used to explain these transients and to show how V_T evolution depends on the bias and the charge distribution between the traps close to the Si-SiO₂ interface and the FG while the device is irradiated.