Theoretical investigation of terahertz pulses generated from ultrafast photoconductive switches

Author

Ma, Z. ; Ma, H. ; Yang, C. ; Feng, K.

Author_Institution

Beijing Inst. of Radio Metrol. & Meas., Beijing, China

Volume

1

fYear

2010

fDate

17-20 Sept. 2010

Firstpage

1

Lastpage

4

Abstract

The technique of terahertz pulses generated from the photoconductive switches has been applied in the ultrafast electrical pulse metrology recently. A lumped-element theoretical model is established to describe the performance of the LT-GaAs ultrafast photoconductive switch used in the ultrafast pulse standard. Based on the model, waveforms and power spectrums of the generated terahertz pulses are calculated under 840 nm optical excitations. And comparisons between the theoretical results and the experimental results are carried out.

Keywords

III-V semiconductors; electro-optical switches; gallium arsenide; microwave photonics; optical pulse generation; photoconducting switches; terahertz wave generation; GaAs; lumped-element theoretical model; optical excitation; power spectrums; terahertz pulse generation; ultrafast electrical pulse metrology; ultrafast photoconductive switches; wavelength 840 nm; Coplanar waveguides; Equations; Mathematical model; Optical pulses; Optical switches; Substrates; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Signals Systems and Electronics (ISSSE), 2010 International Symposium on

Conference_Location

Nanjing

Print_ISBN

978-1-4244-6352-7

Type

conf

DOI

10.1109/ISSSE.2010.5606923

Filename

5606923