Analysis and design of a fully integrated IMT-Advanced/UWB dual-band LNA

A reconfigurable dual-band low noise amplifier (LNA) for 3.4-3.6 GHz IMT-Advanced and 4.2-4.8 GHz UWB systems is presented in this paper. Two different input matching networks with source-inductive-degeneration cascode configuration are used to switch at two different frequency bands. The parallel capacitors between the input MOSFETs´ gate and source are used to optimize noise factor of the LNA. The LNA is designed in 0.13-μm CMOS process. Simulation results show that: In IMT-Advanced mode, NF<;1.8 dB, S₁₁<;-18 dB, S₂₂<;-15.3 dB, S₂₁>20.9 dB. In UWB mode, NF<;2.3 dB, S₁₁<;-15 dB, S₂₂<;-14.5 dB, S₂₁>19.2 dB, while dissipating 13.5 mA current from a 1.2 V supply. S₁₂ is less than -50 dB in both bands. The total chip area is 1×1.3 mm².