New Analytical Model for Nanoscale Tri-Gate SOI MOSFETs Including Quantum Effects

Author

Vimala, P. ; Balamurugan, N.B.

Author_Institution

Dept. of Electron. & Commun. Eng., Thiagarajar Coll. of Eng., Madurai, India

Volume

2

Issue

1

fYear

2014

fDate

Jan. 2014

Firstpage

1

Lastpage

7

Abstract

In this paper, an analytical model for tri-Gate (TG) MOSFETs considering quantum effects is presented. The proposed model is based on the analytical solution of Schrodinger-Poisson´s equation using variational approach. An analytical expression of the inversion charge distribution function (ICDF) or wave function for the TG MOSFETs has been developed. This obtained ICDF is used to calculate the device parameters, such as the inversion charge centroid, threshold voltage, inversion charge, gate capacitance, and drain current. These parameters are modeled for various device dimensions and applied bias. The results are validated against the TCAD simulation results.

Keywords

MOSFET; Poisson equation; Schrodinger equation; capacitance; semiconductor device models; silicon-on-insulator; variational techniques; wave functions; Schrodinger- Poisson equation; TCAD simulation; drain current; gate capacitance; inversion charge centroid; inversion charge distribution function; nanoscale trigate SOI MOSFETs; quantum effects; threshold voltage; variational approach; wave function; Analytical models; Equations; Logic gates; MOSFET; Mathematical model; Semiconductor device modeling; Silicon; Device modeling; Poisson–Schrodinger equation; energy quantization; inversion charge; tri-gate MOSFET;

fLanguage

English

Journal_Title

Electron Devices Society, IEEE Journal of the

Publisher

ieee

ISSN

2168-6734

Type

jour

DOI

10.1109/JEDS.2014.2298915

Filename

6705594