Title :
A compact S Band 100W integrated gallium nitride multistage power amplifier
Author :
Poulton, Matthew ; Martin, Jay ; Martin, Jason ; Aichele, David
Author_Institution :
Defense & Power Bus. Unit, RFMD, Charlotte, NC, USA
Abstract :
Compact S Band (2.2GHz to 2.8GHz and 2.8GHz to 3.2GHz) two stage power amplifiers are demonstrated using gallium nitride and gallium arsenide semiconductor technologies. The amplifier provides 83W to 105W of peak output power with peak power added efficiency of 42% to 51% over a 24% bandwidth. Small signal gain is 21dB to 24dB over this frequency band. The circuit design integrates matching networks and bias decoupling networks into a very compact 8mm by 8mm package. Additionally, the overall application board space is also a very compact 40mm by 25mm.
Keywords :
III-V semiconductors; UHF power amplifiers; gallium arsenide; gallium compounds; integrated circuit design; wide band gap semiconductors; GaAs; GaN; compact S band integrated multistage power amplifier; decoupling networks; frequency 2.2 GHz to 3.2 GHz; gain 21 dB to 24 dB; matching networks; power 100 W; power 83 W to 105 W; semiconductor technologies; size 25 mm; size 40 mm; size 8 mm; small signal gain; two stage power amplifiers; Bandwidth; Gallium nitride; Logic gates; MMICs; Power amplifiers; Power generation;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7231-4
